EMB03N03V Datasheet, Transistor, Excelliance MOS

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Part number:

EMB03N03V

Manufacturer:

Excelliance MOS

File Size:

876.39kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor.

TAGS

EMB03N03V

Excelliance MOS

📁 Related Datasheet

EMB03N03A - MOSFET (Excelliance MOS)
EMB03N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.5mΩ ID 80A G UIS, Rg 1.

EMB03N03H - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.0mΩ ID 75A G UIS, Rg 100% Tested .

EMB03N03HR - MOSFET (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 3.0mΩ ID 75A G N Channel MOSFET UI.

EMB03N06HS - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MAX.)@VGS=10V R.

EMB03K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
(Preliminary) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.).

EMB03P03A - MOSFET (Excelliance MOS)
EMB03P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.3mΩ ID ‐85A G UIS, Rg.

EMB03P03H - MOSFET (Excelliance MOS)
EMB03P03H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.1mΩ ID ‐85A G UIS, Rg.

EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 5.5mΩ 30V 2..

EMB02N03HR - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested.

EMB02N03HS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested.