EMB03N03HR - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

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Datasheet Details

Part number	EMB03N03HR
Manufacturer	Excelliance MOS
File Size	371.75 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB03N03HR-ExcellianceMOS.pdf

EMB03N03HR Product details

Description

N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.0mΩ 4.0mΩ ID @TC=25℃ 115A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Drain Current Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TA = 25 °C TA = 70 °C

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Published: Apr 27, 2017 |