Excelliance MOS manufacturer logo Part number: EMB03P03A Manufacturer: Excelliance MOS File Size: 202.41kb Download: 📄 Datasheet Description: Mosfet.
EMB03P03H - MOSFET (Excelliance MOS) EMB03P03H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.1mΩ ID ‐85A G UIS, Rg.
EMB03K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) (Preliminary) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.).
EMB03N03A - MOSFET (Excelliance MOS) EMB03N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.5mΩ ID 80A G UIS, Rg 1.
EMB03N03H - MOSFET (Excelliance MOS) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 3.0mΩ ID 75A G UIS, Rg 100% Tested .
EMB03N03HR - MOSFET (Excelliance MOS) N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 3.0mΩ ID 75A G N Channel MOSFET UI.
EMB03N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 3.0mΩ ID 37A N Channel MOSFET UIS, Rg .
EMB03N06HS - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MAX.)@VGS=10V R.
EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 5.5mΩ 30V 2..
EMB02N03HR - MOSFET (Excelliance MOS) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested.
EMB02N03HS - MOSFET (Excelliance MOS) N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested.
