EMB07P03G Datasheet - Excelliance MOS

EMB07P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB07P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 7.5mΩ ID ‐15A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=‐25A, RG=25Ω Power Dissipation TA = 25 °C TA .

EMB07P03G Datasheet (182.26 KB)

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Datasheet Details

Part number:

EMB07P03G

Manufacturer:

Excelliance MOS

File Size:

182.26 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMB07P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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