EMB07P03G Datasheet, Transistor, Excelliance MOS

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Part number:

EMB07P03G

Manufacturer:

Excelliance MOS

File Size:

182.26kb

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📄 Datasheet

Description:

P-channel logic level enhancement mode field effect transistor.

TAGS

EMB07P03G

Excelliance MOS

📁 Related Datasheet

EMB07P03A - P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB07P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 7.5mΩ ID ‐80A G UIS, Rg.

EMB07P03CS - P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 6.8mΩ ID ‐80A G UIS, Rg 100% Teste.

EMB07P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 7.8mΩ ID -26A P-Channel MOSFET UIS, R.

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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 7.8mΩ ID ‐24A UIS, Rg 100% Tested.

EMB07N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB07N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 7mΩ ID 70A G UIS, Rg 100.

EMB07N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel .

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V R.

EMB07N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 7mΩ ID 24A N Channel MOSFET UIS, Rg 10.

EMB07N03VQ - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 7mΩ ID 55A G UIS, Rg 100% Tested S.