EMB07B03H Datasheet - Excelliance MOS

EMB07B03H Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor

Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 7.8mΩ ID ‐24A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current TC = 25 °C TA= 25 °C(t≦10s) TA= 25 °C(Steady‐State) Pulsed Drain Current1 TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, IA.

EMB07B03H Datasheet (233.94 KB)

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Datasheet Details

Part number:

EMB07B03H

Manufacturer:

Excelliance MOS

File Size:

233.94 KB

Description:

Dual p-channel logic level enhancement mode field effect transistor.

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EMB07B03H Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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