EMB07N04A Datasheet - Excelliance MOS

EMB07N04A MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 7mΩ ID 55A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=30A, RG=25Ω L = 0.05mH Power Dissipation.

EMB07N04A Datasheet (212.44 KB)

EMB07N04A Datasheet Preview — Preview of EMB07N04A PDF

Datasheet Details

Part number:

EMB07N04A

Manufacturer:

Excelliance MOS

File Size:

212.44 KB

Description:

Mosfet.

📁 Related Datasheet

EMB07N04H MOSFET (Excelliance MOS)

EMB07N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03HS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03V N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03VQ Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07B03H Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07P03A P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMB07N04A MOSFET Excelliance MOS

EMB07N04A Distributor