EMB07N03HR Datasheet - Excelliance MOS

EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel MOSFET UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS PIN1 SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 50 ID TC = 100 °C 35 IDM 140 Avalanche Current IAS 37.5 Avalanche Ener.

EMB07N03HR Datasheet (202.20 KB)

EMB07N03HR Datasheet Preview — Preview of EMB07N03HR PDF

Datasheet Details

Part number:

EMB07N03HR

Manufacturer:

Excelliance MOS

File Size:

202.20 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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