EMB07N03HS
Excelliance MOS
533.64kb
Single n-channel logic level enhancement mode field effect transistor. N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.0mΩ 10.6mΩ ID @TC=25℃ 51.0A ID @TA=25℃ 14.0A Single N Channel
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EMB07N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB07N03HR
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
30V
RDSON (MAX.)
7mΩ
ID
50A
G
N Channel .
EMB07N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB07N03A
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
7mΩ
ID
70A
G
UIS, Rg 100.
EMB07N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
7mΩ
ID
24A
N Channel MOSFET
UIS, Rg 10.
EMB07N03VQ - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB07N03VQ
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
30 V
RDSON (MA.
EMB07N04A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
7mΩ
ID
55A
G
UIS, Rg 100% Tested
S.
EMB07N04H - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
40V
D
RDSON (MAX.)
7mΩ
ID
55A
G
UIS, Rg 100% Tested
S.
EMB07B03H - Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
7.8mΩ
ID
‐24A
UIS, Rg 100% Tested.
EMB07P03A - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB07P03A
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
7.5mΩ
ID
‐80A
G
UIS, Rg.
EMB07P03CS - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
6.8mΩ
ID
‐80A
G
UIS, Rg 100% Teste.
EMB07P03G - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB07P03G
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
7.5mΩ
ID
‐15A
G
UIS, Rg.