N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 7mΩ ID 24A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS =15A, RG=25Ω EAS Repetitive
Datasheet Details
Part number:
EMB07N03V
Manufacturer:
Excelliance MOS
File Size:
864.37 KB
Description:
N-channel logic level enhancement mode field effect transistor.