EMB07N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 7mΩ ID 70A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 70 ID TC = 100 °C 43 IDM 160 Avalanche Current IAS 35 Avalanche Energy Repetitive Avalanche Ene
Datasheet Details
Part number:
EMB07N03A
Manufacturer:
Excelliance MOS
File Size:
223.54 KB
Description:
N-channel logic level enhancement mode field effect transistor.