EMB07N03A Datasheet - Excelliance MOS

EMB07N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB07N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 7mΩ ID 70A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 70 ID TC = 100 °C 43 IDM 160 Avalanche Current IAS 35 Avalanche Energy Repetitive Avalanche Ene.

EMB07N03A-ExcellianceMOS.pdf

EMB07N03A Datasheet Preview — Preview of EMB07N03A PDF

Datasheet Details

Part number:

EMB07N03A

Manufacturer:

Excelliance MOS

File Size:

223.54 KB

Description:

N-channel logic level enhancement mode field effect transistor.

📁 Related Datasheet

EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03HS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03V N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03VQ Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N04A MOSFET (Excelliance MOS)

EMB07N04H MOSFET (Excelliance MOS)

EMB07B03H Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07P03A P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMB07N03A EMB07N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

EMB07N03A Distributor