EMB07P03V Datasheet - Excelliance MOS

EMB07P03V P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 7.8mΩ ID -26A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current ID TA = 25 °C TC = 100 °C Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS=-26A, RG=25Ω EAS Rep.

EMB07P03V Datasheet (873.61 KB)

EMB07P03V Datasheet Preview — Preview of EMB07P03V PDF

Datasheet Details

Part number:

EMB07P03V

Manufacturer:

Excelliance MOS

File Size:

873.61 KB

Description:

P-channel logic level enhancement mode field effect transistor.

📁 Related Datasheet

EMB07P03A P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07P03CS P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07B03H Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03HS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB07N03V N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMB07P03V P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

EMB07P03V Distributor