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EMB17A03G Datasheet - Excelliance MOS

EMB17A03G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Dual Nā€Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  RDSON (MAX.)  17mĪ©  ID  10A    UIS, Rg 100% Tested  Pbā€Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 Ā°C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  EMB17A03G LIMITS  UNIT  Gateā€Source Voltage  VGS  Ā±20  Continuous Drain Current  Pulsed Drain Current1  TA = 25 Ā°C  TA = 100 Ā°C  ID  IDM  10  7  40  Avalanche Current  IAS  12  Avalan.

EMB17A03G Datasheet (193.77 KB)

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Datasheet Details

Part number:

EMB17A03G

Manufacturer:

Excelliance MOS

File Size:

193.77 KB

Description:

Dual n-channel logic level enhancement mode field effect transistor.

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EMB17A03G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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