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EMB17A03G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  RDSON (MAX.)  17mΩ  ID  10A    UIS, Rg .

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Datasheet Specifications

Part number
EMB17A03G
Manufacturer
Excelliance MOS
File Size
193.77 KB
Datasheet
EMB17A03G-ExcellianceMOS.pdf
Description
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB17A03G Distributors

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Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS
Excelliance MOS EMB17A03G-like datasheet