EMB17A03G
Excelliance MOS
193.77kb
Dual n-channel logic level enhancement mode field effect transistor.
TAGS
📁 Related Datasheet
EMB17A03H - MOSFET
(Excelliance MOS)
EMB17A03H
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
17mΩ
ID
16A
UIS, Rg 100.
EMB17A03V - Dual N-Channel MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
17mΩ
ID 10A
UIS, Rg .
EMB17C03G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB17C03G
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
P‐CH
BVDSS
30V
‐30V
RDSON (MAX.)
17mΩ 20mΩ.
EMB17N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB17N03G
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
17mΩ
ID
12A
G
UIS, Rg 10.
EMB10 - PNP Digital Transistors
(Rohm)
EMB10 / UMB10N / IMB10A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Parameter
VCC IC(MAX.)
R1 R2
Tr1 .
EMB10FHA - PNP -100mA -50V Complex Digital Transistors
(ROHM)
.
EMB11 - Dual Digital Transistors
(Rohm)
EMB11 / UMB11N / IMB11A
General purpose (dual digital transistors)
Datasheet
Parameter VCC
IC(MAX.) R1 R2
DTr1 and DTr2 -50V
-100mA 10kΩ 10kΩ
lFea.
EMB11 - Dual Digital Transistors
(JCET)
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMB11 Dual Digital Transistors (PNP+PNP)
FEATURES z.
EMB11A03G - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
11mΩ
ID 12A
UIS, Rg .
EMB12K03GP - MOSFET
(Excelliance MOS)
Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V 30V
RDSON .
