EMB17A03G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Description

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 10A UIS, Rg .

Datasheet Specifications

Part number: EMB17A03G
Manufacturer: Excelliance MOS
File Size: 193.77 KB
Datasheet: EMB17A03G-ExcellianceMOS.pdf
Description: Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

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