EMB17A03H Datasheet (Excelliance MOS)

EMB17A03H, MOSFET

EMB17A03H Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 16A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 16 ID TC = 100 °C 10 IDM 64 Avalanche Current IAS 16 Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω E