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EMB17N03G Datasheet - Excelliance MOS

EMB17N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB17N03G N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 17mΩ ID 12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 12 ID TA = 100 °C 8 IDM 48 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=10A, RG=25.

EMB17N03G Datasheet (181.20 KB)

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Datasheet Details

Part number:

EMB17N03G

Manufacturer:

Excelliance MOS

File Size:

181.20 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB17N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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