EMB17N03G Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB17N03G, N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB17N03G N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 17mΩ ID 12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 12 ID TA = 100 °C 8 IDM 48 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=10A, RG=25