EMB17A03V Datasheet, mosfet equivalent, Excelliance MOS

PDF File Details

Part number:

EMB17A03V

Manufacturer:

Excelliance MOS

File Size:

180.96kb

Download:

📄 Datasheet

Description:

Dual n-channel mosfet.

Datasheet Preview: EMB17A03V 📥 Download PDF (180.96kb)
Page 2 of EMB17A03V Page 3 of EMB17A03V

TAGS

EMB17A03V
Dual
N-Channel
MOSFET
Excelliance MOS

📁 Related Datasheet

EMB17A03G - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  RDSON (MAX.)  17mΩ  ID  10A    UIS, Rg .

EMB17A03H - MOSFET (Excelliance MOS)
EMB17A03H Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 16A UIS, Rg 100.

EMB17C03G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB17C03G N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 17mΩ 20mΩ.

EMB17N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB17N03G N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 17mΩ ID 12A G UIS, Rg 10.

EMB10 - PNP Digital Transistors (Rohm)
EMB10 / UMB10N / IMB10A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Parameter VCC IC(MAX.) R1 R2 Tr1 .

EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
.

EMB11 - Dual Digital Transistors (Rohm)
EMB11 / UMB11N / IMB11A General purpose (dual digital transistors) Datasheet Parameter VCC IC(MAX.) R1 R2 DTr1 and DTr2 -50V -100mA 10kΩ 10kΩ lFea.

EMB11 - Dual Digital Transistors (JCET)
JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB11 Dual Digital Transistors (PNP+PNP) FEATURES z.

EMB11A03G - MOSFET (Excelliance MOS)
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  RDSON (MAX.)  11mΩ  ID  12A    UIS, Rg .

EMB12K03GP - MOSFET (Excelliance MOS)
    Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH‐Q1  N‐CH‐Q2  BVDSS  30V  30V  RDSON .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts