EMB18A04VB Datasheet, Transistor, Excelliance MOS

PDF File Details

Part number:

EMB18A04VB

Manufacturer:

Excelliance MOS

File Size:

609.96kb

Download:

📄 Datasheet

Description:

Dual n-channel logic level enhancement mode field effect transistor. Q1 Q2 BVDSS 40V 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 18mΩ 25mΩ 18mΩ 25mΩ ID @TC=25℃ ID @TA=25℃ 28A 28A 10A 10

TAGS

EMB18A04VB

Excelliance MOS

📁 Related Datasheet

EMB10 - PNP Digital Transistors (Rohm)
EMB10 / UMB10N / IMB10A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Parameter VCC IC(MAX.) R1 R2 Tr1 .

EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
.

EMB11 - Dual Digital Transistors (Rohm)
EMB11 / UMB11N / IMB11A General purpose (dual digital transistors) Datasheet Parameter VCC IC(MAX.) R1 R2 DTr1 and DTr2 -50V -100mA 10kΩ 10kΩ lFea.

EMB11 - Dual Digital Transistors (JCET)
JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB11 Dual Digital Transistors (PNP+PNP) FEATURES z.

EMB11A03G - MOSFET (Excelliance MOS)
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  RDSON (MAX.)  11mΩ  ID  12A    UIS, Rg .

EMB12K03GP - MOSFET (Excelliance MOS)
    Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH‐Q1  N‐CH‐Q2  BVDSS  30V  30V  RDSON .

EMB12K03V - MOSFET (Excelliance MOS)
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    N‐CH‐Q1  N‐CH‐Q2  BVDSS  RDSON (MAX.)  30V  12mΩ  30.

EMB12N03A - MOSFET (Excelliance MOS)
EMB12N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 12mΩ ID 25A G UIS, Rg 10.

EMB12N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 12mΩ ID 12A G UIS, Rg 10.

EMB12N03H - MOSFET (Excelliance MOS)
EMB12N03H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11.5mΩ ID 25A G UIS, Rg .