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EMB18A04VB

Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB18A04VB General Description

Q1 Q2 BVDSS 40V 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 18mΩ 25mΩ 18mΩ 25mΩ ID @TC=25℃ ID @TA=25℃ 28A 28A 10A 10A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST COND.

EMB18A04VB Datasheet (609.96 KB)

Preview of EMB18A04VB PDF

Datasheet Details

Part number:

EMB18A04VB

Manufacturer:

Excelliance MOS

File Size:

609.96 KB

Description:

Dual n-channel logic level enhancement mode field effect transistor.

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EMB18A04VB Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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