EMB21A03G Datasheet - Excelliance MOS

EMB21A03G MOSFET

EMB21A03G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 21mΩ ID 7.5A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 7.5 ID TA = 100 °C 5.5 IDM 30 Avalanche Current IAS 10 Avalanche Energy L = 0.1mH, ID=7.5A, RG=25.

EMB21A03G Datasheet (193.48 KB)