EMB21A03V Datasheet (Excelliance MOS)

EMB21A03V, MOSFET

EMB21A03V Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 21mΩ ID 9A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 9 ID TA = 100 °C 6.3 IDM 36 Avalanche Current IAS 10 Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω EA