EMB21C03G - MOSFET
(Excelliance MOS)
EMB21C03G
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
P‐CH
BVDSS
30V
‐30V
RDSON (MAX.)
21mΩ 35mΩ.
EMB21C03S - MOSFET
(Excelliance MOS)
EMB21C03S
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
P‐CH
BVDSS
30V
‐30V
RDSON (MAX.)
21mΩ 35mΩ.
EMB21A03G - MOSFET
(Excelliance MOS)
EMB21A03G
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
21mΩ
ID
7.5A
UIS, Rg 10.
EMB21A03V - MOSFET
(Excelliance MOS)
EMB21A03V
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
21mΩ
ID
9A
UIS, Rg 100%.
EMB21N03P - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
21mΩ
ID
6A
G
S Pb‐Free Lead Plating.
EMB2 - PNP -100mA -50V Complex Digital Transistors
(Rohm)
EMB2 / UMB2N / IMB2A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2
EMT6
(6.