EMB25A06S Datasheet - Excelliance MOS

EMB25A06S MOSFET

EMB25A06S Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 30mΩ ID 7A UIS, 100% Tested Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR .

EMB25A06S Datasheet (205.08 KB)

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Datasheet Details

Part number:

EMB25A06S

Manufacturer:

Excelliance MOS

File Size:

205.08 KB

Description:

Mosfet.

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