EMB25A06S
Excelliance MOS
205.08kb
Mosfet.
TAGS
📁 Related Datasheet
EMB25N06A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
28mΩ
ID
30A
G
UIS, Rg 100% Tested
.
EMB25N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
30mΩ
ID
50A
G
UIS, Rg 100% Tested
.
EMB25P04A - MOSFET
(Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐40V
RDSON (MAX.)
25mΩ
ID
‐20A
G
UIS, Rg 100% Tested.
EMB2 - PNP -100mA -50V Complex Digital Transistors
(Rohm)
EMB2 / UMB2N / IMB2A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2
EMT6
(6.
EMB20D03H - MOSFET
(Excelliance MOS)
.
EMB20N03A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID
15A
G
UIS, Rg 100% Tested
.
EMB20N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID
9.5A
G
UIS, Rg 100% Tested
.
EMB20N03Q - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
22mΩ
ID
6A
G
UIS, Rg 100% Tested
S.
EMB20N03V - N-Channel MOSFET
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
20mΩ
ID
12A
N‐Channel MOSFET
UIS, Rg 1.
EMB20N03VAA - MOSFET
(Excelliance MOS)
EMB20N03VAA
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
20mΩ
ID
7A
G
UIS, Rg 1.
