EMB36N10A Datasheet - Excelliance MOS

EMB36N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH EAS L = 0.05mH.

EMB36N10A Datasheet (844.59 KB)