Datasheet4U Logo Datasheet4U.com

EMB37C06A Datasheet - Excelliance MOS

EMB37C06A MOSFET

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID N‐CH 60V 37mΩ 12A P‐CH ‐60V 90mΩ ‐7A D1 G1 S1 D2 G2 S2 EMB37C06A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range.

EMB37C06A Datasheet (234.42 KB)

Preview of EMB37C06A PDF
EMB37C06A Datasheet Preview Page 2 EMB37C06A Datasheet Preview Page 3

Datasheet Details

Part number:

EMB37C06A

Manufacturer:

Excelliance MOS

File Size:

234.42 KB

Description:

Mosfet.

📁 Related Datasheet

EMB37N06A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB3 PNP Digital Transistors (Rohm)

EMB3 Dual Digital Transistors (JCET)

EMB30B03V MOSFET (Excelliance MOS)

EMB30P03A MOSFET (Excelliance MOS)

EMB30P03VAT P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB32A03G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB32A03VA MOSFET (Excelliance MOS)

TAGS

EMB37C06A MOSFET Excelliance MOS

EMB37C06A Distributor