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EMBA3P03JS Datasheet - Excelliance MOS

EMBA3P03JS P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 125mΩ ID -3.1A G S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMBA3P03JS LIMITS ±20 -.

EMBA3P03JS Datasheet (165.06 KB)

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Datasheet Details

Part number:

EMBA3P03JS

Manufacturer:

Excelliance MOS

File Size:

165.06 KB

Description:

P-channel logic level enhancement mode field effect transistor.

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EMBA3P03JS P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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