EMBE0N10P

Part number:

EMBE0N10P

Manufacturer:

Excelliance MOS

File Size:

173.47 KB

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📄 Download EMBE0N10P Datasheet PDF

Description:

Mosfet.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V.
D RDSON (MAX.) 500mΩ ID 1.8A G UIS 100% Tested S Pb‐Free Lead Plating & Halogen Free.

EMBE0N10JS Datasheet PDF

EMBE0N10JS, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 500mΩ ID 0.9A G UIS 10.

EMBE0N10Q Datasheet PDF

EMBE0N10Q, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 500mΩ ID 2.1A G UIS 10.

EMBE0N15A Datasheet PDF

EMBE0N15A, Excelliance MOS
.

EMBE0A10G Datasheet PDF

EMBE0A10G, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 500mΩ ID 1.5A UIS 100% T.

EMB02K03HP Datasheet PDF

EMB02K03HP, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 5.5mΩ 30V 2..

EMB02N03HR Datasheet PDF

EMB02N03HR, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested.

EMB02N03HS Datasheet PDF

EMB02N03HS, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested.

EMB02N60AB Datasheet PDF

EMB02N60AB, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 4.0Ω ID 2A G UIS, 100% Tested S .

MOSFET

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