EMBE0N10P Datasheet - Excelliance MOS

EMBE0N10P MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 500mΩ ID 1.8A G UIS 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS TA = 25 °C ID TA = 100 °C IDM Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg THERMAL.

EMBE0N10P Datasheet (173.47 KB)