EMBE0N10JS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
500mΩ
ID 0.9A G
UIS 10.
EMBE0N10P - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
500mΩ
ID 1.8A G
UIS 10.
EMBE0N15A - MOSFET
(Excelliance MOS)
.
EMBE0A10G - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
500mΩ
ID 1.5A
UIS 100% T.
EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 5.5mΩ
30V 2..
EMB02N03HR - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
1.7mΩ
ID
100A
G
UIS, Rg 100% Tested.