EMBE0N10Q Datasheet - Excelliance MOS

EMBE0N10Q MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 500mΩ ID 2.1A G UIS 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C VGS ID IDM Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temper.

EMBE0N10Q Datasheet (195.86 KB)