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EMBE0N10Q MOSFET

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Description

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  500mΩ  ID  2.1A  G   UIS 10.

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Datasheet Specifications

Part number
EMBE0N10Q
Manufacturer
Excelliance MOS
File Size
195.86 KB
Datasheet
EMBE0N10Q-ExcellianceMOS.pdf
Description
MOSFET

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