EMBE0A10G Datasheet - Excelliance MOS

EMBE0A10G MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 500mΩ ID 1.5A UIS 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS TA = 25 °C ID TA = 100 °C IDM Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg THERMAL RESISTANC.

EMBE0A10G Datasheet (189.95 KB)