4N60B 600V N-Channel MOSFET

Fairchild Semiconductor

Description

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: 4N60B
Manufacturer: Fairchild Semiconductor
File Size: 916.32 KB
Datasheet: 4N60B-FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

Features

* 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Ser

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📁 Related Datasheet

4N60 4N60-C 4N60-CB 4N60-E 4N60-N 4N60-Q

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4N60B 600V N-Channel MOSFET Fairchild Semiconductor

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