F20U20S Datasheet, Ffpf20u20s, Fairchild Semiconductor

F20U20S Features

• Ffpf20u20s
• Ultrafast with soft recovery
• Low forward voltage Applications
• Power switching circuits Output rectifiers Freewheeling diodes

PDF File Details

Part number:

F20U20S

Manufacturer:

Fairchild Semiconductor

File Size:

49.63kb

Download:

📄 Datasheet

Description:

Ffpf20u20s.

F20U20S Application

• Applications
• Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-2

TAGS

F20U20S

Fairchild Semiconductor

📁 Related Datasheet

F20UP20DN - FFPF20UP20DN (Fairchild Semiconductor)
FFPF20UP20DN Ultrafast Recovery Power Rectifier FFPF20UP20DN Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 45ns • Hi.

F20UP60DN - FFPF20UP60DN (Fairchild Semiconductor)
FFPF20UP60DN FFPF20UP60DN Features • High Speed Switching, trr < 70ns @ IF = 10A • High Reverse Voltage and High Reliability • RoHS pliant Applica.

F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2013 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2021 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2041 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .