F20U20S
Fairchild Semiconductor
49.63 KB
Ffpf20u20s.
FFPF20U20S
FFPF20U20S
Features
* Ultrafast with soft recovery * Low forward voltage
Applications
*.
* * * Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO.
📁 Related Datasheet
F20UP20DN - FFPF20UP20DN
(Fairchild Semiconductor)
FFPF20UP20DN Ultrafast Recovery Power Rectifier
FFPF20UP20DN
Ultrafast Recovery Power Rectifier
Features
• Ultrafast with Soft Recovery : < 45ns • Hi.
F20UP60DN - FFPF20UP60DN
(Fairchild Semiconductor)
FFPF20UP60DN
FFPF20UP60DN
Features
• High Speed Switching, trr < 70ns @ IF = 10A • High Reverse Voltage and High Reliability • RoHS pliant
Applica.
F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
