Datasheet4U Logo Datasheet4U.com

F20UP60DN FFPF20UP60DN

F20UP60DN Description

FFPF20UP60DN FFPF20UP60DN .

F20UP60DN Features

* High Speed Switching, trr < 70ns @ IF = 10A
* High Reverse Voltage and High Reliability

F20UP60DN Applications

* General Purpose
* Switching Mode Power Supply
* Boost Diode in continuous mode power factor corrections
* Power switching circuits November 2007 tm 20A, 600V Ultrafast Rectifier The FFPF20UP60DN is a ultrafast rectifier with soft recovery characteristics. It is sil

📥 Download Datasheet

Preview of F20UP60DN PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2013 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2021 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
  • F2041 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

📌 All Tags

Fairchild Semiconductor F20UP60DN-like datasheet