F20UP60DN Datasheet, Ffpf20up60dn, Fairchild Semiconductor

F20UP60DN Features

  • Ffpf20up60dn
  • High Speed Switching, trr < 70ns @ IF = 10A
  • High Reverse Voltage and High Reliability
  • RoHS compliant Applications
  • General Purpose
  • Switc

PDF File Details

Part number:

F20UP60DN

Manufacturer:

Fairchild Semiconductor

File Size:

226.21kb

Download:

📄 Datasheet

Description:

Ffpf20up60dn.

Datasheet Preview: F20UP60DN 📥 Download PDF (226.21kb)
Page 2 of F20UP60DN Page 3 of F20UP60DN

F20UP60DN Application

  • Applications
  • General Purpose
  • Switching Mode Power Supply
  • Boost Diode in continuous mode power factor corrections

TAGS

F20UP60DN
FFPF20UP60DN
Fairchild Semiconductor

📁 Related Datasheet

F20UP20DN - FFPF20UP20DN (Fairchild Semiconductor)
FFPF20UP20DN Ultrafast Recovery Power Rectifier FFPF20UP20DN Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 45ns • Hi.

F20U20S - FFPF20U20S (Fairchild Semiconductor)
FFPF20U20S FFPF20U20S Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers .

F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2013 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2021 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2041 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

Stock and price

FLIP ELECTRONICS
DIODE ARR AVAL 600V 10A TO220F-3
DigiKey
FFPF20UP60DNTU
3000 In Stock
Qty : 200 units
Unit Price : $2.67
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts