FCD7N60 Datasheet - Fairchild Semiconductor

FCD7N60, N-Channel MOSFET

FCD7N60 * N-Channel SuperFET® MOSFET FCD7N60 N-Channel SuperFET® MOSFET 600 V, 7 A, 600 mΩ

Features

* 650 V @ TJ = 150°C
* Typ. RDS(on) = 530 mΩ
* Ultra Low Gate Charge (Typ. Qg = 23 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 60 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G S D D-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Drain Current Drain Current -

FCD7N60-FairchildSemiconductor.pdf