FCD3400N80Z Datasheet, Mosfet, Fairchild Semiconductor

FCD3400N80Z Features

  • Mosfet
  • RDS(on) = 2.75 Ω (Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 7.4 nC)
  • Low Eoss (Typ. 0.9 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.)

PDF File Details

Part number:

FCD3400N80Z

Manufacturer:

Fairchild Semiconductor

File Size:

719.89kb

Download:

📄 Datasheet

Description:

Mosfet. SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge ba

Datasheet Preview: FCD3400N80Z 📥 Download PDF (719.89kb)
Page 2 of FCD3400N80Z Page 3 of FCD3400N80Z

FCD3400N80Z Application

  • Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizin

TAGS

FCD3400N80Z
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

FCD360N65S3R0 - N-Channel MOSFET (ON Semiconductor)
FCD360N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new .

FCD380N60E - N-Channel MOSFET (Fairchild Semiconductor)
FCD380N60E N-Channel MOSFET March 2013 FCD380N60E N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = .

FCD1300N80Z - MOSFET (Fairchild Semiconductor)
FCD1300N80Z — N-Channel SuperFET® II MOSFET FCD1300N80Z N-Channel SuperFET® II MOSFET 800 V, 4 A, 1.3  August 2014 Features • RDS(on) = 1.05 Ty.

FCD2250N80Z - MOSFET (Fairchild Semiconductor)
FCD2250N80Z — N-Channel SuperFET® II MOSFET December 2014 FCD2250N80Z N-Channel SuperFET® II MOSFET 800 V, 2.6 A, 2.25  Features • RDS(on) = 1.8 .

FCD2250N80Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCD2250N80Z ·FEATURES ·With TO-252(DPAK) packaging ·UIS capability ·High speed switching ·Eas.

FCD260N65S3 - N-Channel MOSFET (ON Semiconductor)
FCD260N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new hi.

FCD260N65S3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance .

FCD4B14 - Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output (ATMEL Corporation)
Features • • • • • • • • • • • • Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02 x 0.55 Image Array: 8 x 280 = 2240 pixels P.

FCD4B14CC - Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output (ATMEL Corporation)
Features • • • • • • • • • • • • Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02 x 0.55 Image Array: 8 x 280 = 2240 pixels P.

FCD4B14CCB - Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output (ATMEL Corporation)
Features • • • • • • • • • • • • Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02 x 0.55 Image Array: 8 x 280 = 2240 pixels P.

Stock and price

onsemi
MOSFET N-CH 800V 2A DPAK
DigiKey
FCD3400N80Z
276 In Stock
Qty : 1000 units
Unit Price : $0.8
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts