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FCD260N65S3

N-Channel MOSFET

FCD260N65S3 Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 222 mW

* Ultra Low Gate Charge (Typ. Qg = 24 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCD260N65S3 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc.

FCD260N65S3 Datasheet (411.08 KB)

Preview of FCD260N65S3 PDF

Datasheet Details

Part number:

FCD260N65S3

Manufacturer:

ON Semiconductor ↗

File Size:

411.08 KB

Description:

N-channel mosfet.

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FCD260N65S3 N-Channel MOSFET ON Semiconductor

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