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FCD360N65S3R0

N-Channel MOSFET

FCD360N65S3R0 Features

* 700 V @ TJ = 150_C

* Typ. RDS(on) = 310 mW

* Ultra Low Gate Charge (Typ. Qg = 18 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCD360N65S3R0 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand

*new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

*resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provid.

FCD360N65S3R0 Datasheet (458.90 KB)

Preview of FCD360N65S3R0 PDF

Datasheet Details

Part number:

FCD360N65S3R0

Manufacturer:

ON Semiconductor ↗

File Size:

458.90 KB

Description:

N-channel mosfet.

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FCD360N65S3R0 N-Channel MOSFET ON Semiconductor

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