FCD9N60NTM N-Channel MOSFET

Fairchild Semiconductor

Description

FCD9N60NTM N-Channel MOSFET FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ .
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it.

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Datasheet Specifications

Part number: FCD9N60NTM
Manufacturer: Fairchild Semiconductor
File Size: 796.59 KB
Datasheet: FCD9N60NTM-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 0.330Ω ( Typ. )@ VGS = 10V, ID = 4.5A
* Ultra Low Gate Charge (Typ. Qg = 17.8nC)
* Low Effective Output Capacitance
* 100% Avalanche Tested

Applications

* D G S D G D-PAK (TO-252) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness

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FCD9N60NTM N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FCD9N60NTM-like datasheet