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FDB047N10 Datasheet - Fairchild Semiconductor

Datasheet Details

Part number:

FDB047N10

Manufacturer:

Fairchild Semiconductor

File Size:

565.29 KB

Description:

MOSFET

FDB047N10 * N-Channel PowerTrench® MOSFET FDB047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.7 mΩ November 2013 Features * RDS(on) = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for

FDB047N10-FairchildSemiconductor.pdf

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FDB047N10, MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications * Synchronous Rectification for ATX / Server / Telecom PSU * Batte

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