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FDFC2P100 Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

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Description

FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode October 2006 FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky .
The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier r.

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Datasheet Specifications

Part number: FDFC2P100
Manufacturer: Fairchild Semiconductor
File Size: 339.07 KB
Datasheet: FDFC2P100_FairchildSemiconductor.pdf
Description: Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Features

* Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A
* Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A
* Low Gate Charge (3.4nC typ)

FDFC2P100 Distributors

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FDFC2P100 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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