* Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A
* Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A
* Low Gate Charge (3.4nC typ)
* Compact industry standard SuperSOTTM-6 package General Description The FDFC2P100 combine the exceptional performance of Fairchild's Power
FDFC2P100 Datasheet (339.07 KB)
FDFC2P100
Fairchild Semiconductor
339.07 KB
Integrated p-channel powertrench mosfet and schottky diode.
FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
October 2006
FDFC2P100
Integrated P-Channel PowerTrench® MOSFET and Schottky .
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