FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Description

FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode August 2005 FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Di.
FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rect.

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Datasheet Specifications

Part number: FDFM2P110
Manufacturer: Fairchild Semiconductor
File Size: 255.22 KB
Datasheet: FDFM2P110_FairchildSemiconductor.pdf
Description: Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Features

* This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.
* -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V
* Low Profile - 0.8 mm maximun - i

FDFM2P110 Distributors

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FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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