* This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.
* -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V
* Low Profile - 0.8 mm maximun - i
FDFM2P110 Datasheet (255.22 KB)
FDFM2P110
Fairchild Semiconductor
255.22 KB
Integrated p-channel powertrench mosfet and schottky diode.
FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
August 2005
FDFM2P110
Integrated P-Channel PowerTrench® MOSFET and Schottky Di.
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