FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Description

FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2005 FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Di.
FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rect.

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Datasheet Specifications

Part number: FDFM2N111
Manufacturer: Fairchild Semiconductor
File Size: 288.32 KB
Datasheet: FDFM2N111_FairchildSemiconductor.pdf
Description: Integrated N-Channel PowerTrench MOSFET and Schottky Diode

Features

* This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state resistance.
* 4 A, 20 V RDS(ON) = 100mΩ @ VGS = 4.5 V RDS(ON) = 150mΩ @ VGS = 2.5 V
* Low Profile - 0.8 mm maxi

FDFM2N111 Distributors

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FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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