* rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A
* Qg(tot) = 92nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101 Formerly developmental type 82684 Applications
FDI047AN08A0 Datasheet (606.44 KB)
FDI047AN08A0
Fairchild Semiconductor
606.44 KB
N-channel powertrench mosfet.
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ
Featur.
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