FDI33N25 - N-Channel MOSFET

Fairchild Semiconductor

FDI33N25 Datasheet Preview — Preview of FDI33N25 PDF

Datasheet Details

Part number	FDI33N25
Manufacturer	Fairchild ↗ Semiconductor
File Size	870.53 KB
Description	N-Channel MOSFET
Datasheet	FDI33N25_FairchildSemiconductor.pdf

FDI33N25 Product details

Description

May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficient switched mode power supplies and active power factor correction.D D G G S D -PAK FDB Series

Features

33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V.
Low gate charge ( typical 36.8 nC).
Low Crss ( typical 39 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability UniFET.

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Published: May 3, 2007 |