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FDI33N25 N-Channel MOSFET

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Description

FDB33N25 / FDI33N25 250V N-Channel MOSFET FDB33N25 / FDI33N25 250V N-Channel MOSFET .
May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technol.

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Features

* 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
* Low gate charge ( typical 36.8 nC)
* Low Crss ( typical 39 pF)
* Fast switching
* 100% avalanche tested

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📁 Related Datasheet

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