FDMC3300NZA N-Channel MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET December 2005 FDMC3300NZA Monolithic Common Dr.
This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on)@VGS=2.

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Datasheet Specifications

Part number: FDMC3300NZA
Manufacturer: Fairchild Semiconductor
File Size: 342.32 KB
Datasheet: FDMC3300NZA_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A
* RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A
* >2000V ESD protection
* Low Profile-1mm maxium-in the new package MicroFET 3.3x3.3 mm

Applications

* Li-lon Battery Pack LE A REE I DF D1 D1 D2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation (Steady State) Operating and Storage Junction Te

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FDMC3300NZA N-Channel MOSFET Fairchild Semiconductor

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