FDME1023PZT - Dual P-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDME1023PZT Datasheet Preview — Preview of FDME1023PZT PDF

Datasheet Details

Part number	FDME1023PZT
Manufacturer	Fairchild ↗ Semiconductor
File Size	356.26 KB
Description	Dual P-Channel PowerTrench MOSFET
Datasheet	FDME1023PZT_FairchildSemiconductor.pdf

FDME1023PZT Product details

Description

This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications.

Features

Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A.
Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A.
Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A.
Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A.
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
Free from halogenated compounds and antimony oxides.
HBM ESD protection level > 1600V (Note3).
RoHS Compliant General.

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Published: Jun 29, 2010 |