FDME510PZT MOSFET

Fairchild Semiconductor

Description

FDME510PZT P-Channel PowerTrench® MOSFET FDME510PZT P-Channel PowerTrench® MOSFET -20 V, -6 A, 37 mΩ .
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

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Datasheet Specifications

Part number: FDME510PZT
Manufacturer: Fairchild Semiconductor
File Size: 230.38 KB
Datasheet: FDME510PZT-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A
* Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A
* Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A
* Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x

FDME510PZT Distributors

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FDME510PZT MOSFET Fairchild Semiconductor

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