FDME430NT N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDME430NT N-Channel PowerTrench® MOSFET October 2013 FDME430NT N-Channel PowerTrench® MOSFET 30 V, 6 A, 40 mΩ .
Max rDS(on) = 40 mΩ at VGS = 4. Max rDS(on) = 51 mΩ at VGS = 2. Max rDS(on) = 71 mΩ at VGS =.

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Datasheet Specifications

Part number: FDME430NT
Manufacturer: Fairchild Semiconductor
File Size: 212.02 KB
Datasheet: FDME430NT-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Applications

* Li-lon Battery Pack
* Baseband Switch
* Load Switch
* DC-DC Conversion G D Pin 1 D S S D D DD DD GS BOTTOM MicroFET 1.6x1.6 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage G

FDME430NT Distributors

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📌 All Tags

FDME430NT N-Channel PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDME430NT-like datasheet