FDME430NT - N-Channel PowerTrench MOSFET
* Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A * Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A * Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A * Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin * Free from halogenated compounds and antimony
