Datasheet Details
| Part number | FDME430NT |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 212.02 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet |
 FDME430NT-FairchildSemiconductor.pdf
|
| Part number | FDME430NT |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 212.02 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet |
FDME430NT-FairchildSemiconductor.pdf
|
Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides RoHS Compliant This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
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