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FDME410NZT - N-Channel MOSFET

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FDME410NZT Product details

Description

Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level > 1800V (Note3) RoHS Compliant This Single N-Channel MOSFET has been designed using Fairchi

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