FDME1024NZT Datasheet, Mosfet, Fairchild Semiconductor

FDME1024NZT Features

• Mosfet
• Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
• Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
• Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
• Max

PDF File Details

Part number:

FDME1024NZT

Manufacturer:

Fairchild Semiconductor

File Size:

419.85kb

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📄 Datasheet

Description:

Dual n-channel power trench mosfet. This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultrap

FDME1024NZT Application

• Applications It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin pa

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