FDME1024NZT Dual N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDME1024NZT Dual N-Channel Power Trench® MOSFET December 2009 FDME1024NZT Dual N-Channel Power Trench® MOSFET 20 V, 3.4 A, 66 m.
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applicati.

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Datasheet Specifications

Part number: FDME1024NZT
Manufacturer: Fairchild Semiconductor
File Size: 419.85 KB
Datasheet: FDME1024NZT_FairchildSemiconductor.pdf
Description: Dual N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
* Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
* Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
* Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6

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FDME1024NZT Dual N-Channel Power Trench MOSFET Fairchild Semiconductor

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