FDME1024NZT - Dual N-Channel Power Trench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDME1024NZT
Manufacturer	Fairchild ↗ Semiconductor
File Size	419.85 KB
Description	Dual N-Channel Power Trench MOSFET
Datasheet	FDME1024NZT_FairchildSemiconductor.pdf

FDME1024NZT Product details

Description

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applications.

Features

Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A.
Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A.
Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A.
Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A.
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
Free from halogenated compounds and antimony oxides.
HBM ESD protection level > 1600V (Note3).
RoHS Compliant General.

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Published: Jun 29, 2010 |