FDME1024NZT - Dual N-Channel Power Trench MOSFET
FDME1024NZT Features
* Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
* Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
* Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
* Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6
