FDME820NZT Datasheet - Fairchild Semiconductor

FDME820NZT MOSFET

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Applications * Li-lon Battery Pack * Baseband Switch * Load Switch * DC-DC Conversion G D.

FDME820NZT Features

* Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A

* Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A

* Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A

* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

* Free from halogenated compounds and antimon

FDME820NZT-FairchildSemiconductor.pdf