FDME820NZT Datasheet - Fairchild Semiconductor

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FDME820NZT MOSFET

FDME820NZT N-Channel PowerTrench® MOSFET October 2013 FDME820NZT N-Channel PowerTrench® MOSFET 20 V, 9 A, 18 mΩ .
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.

FDME820NZT-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDME820NZT

Manufacturer:

Fairchild Semiconductor

File Size:

256.53 KB

Description:

MOSFET

Features

* Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A
* Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A
* Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
* Free from halogenated compounds and antimon

Applications

* Li-lon Battery Pack
* Baseband Switch
* Load Switch
* DC-DC Conversion G D Pin 1 D S DD S D D DD GS BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage

FDME820NZT Distributors

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FDME820NZT MOSFET Fairchild Semiconductor

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