FDME820NZT - MOSFET

Fairchild Semiconductor

FDME820NZT Datasheet Preview — Preview of FDME820NZT PDF

Datasheet Details

Part number	FDME820NZT
Manufacturer	Fairchild ↗ Semiconductor
File Size	256.53 KB
Description	MOSFET
Datasheet	FDME820NZT-FairchildSemiconductor.pdf

FDME820NZT Product details

Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Li-lon Battery Pack Baseband Switch Load Switch DC-DC Conversion G D Pin 1 D S DD S D D DD GS BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to

Features

Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A.
Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A.
Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A.
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
Free from halogenated compounds and antimony oxides.
HBM ESD protection level >2.5 kV (Note3).
RoHS Compliant General.

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Published: Jan 10, 2017 |