FDP6035L Datasheet (Fairchild Semiconductor)

FDP6035L, N-Channel MOSFET

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage app

FDP6035L Features

* 58 A, 30 V. RDS(ON) = 0.011 Ω @ VGS=10 V RDS(ON) = 0.019 Ω @ VGS=4.5 V. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parame