Datasheet4U Logo Datasheet4U.com

FDP603AL Datasheet - Fairchild Semiconductor

FDP603AL N-Channel MOSFET

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

FDP603AL Features

* 33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON).

FDP603AL Datasheet (414.54 KB)

Preview of FDP603AL PDF
FDP603AL Datasheet Preview Page 2 FDP603AL Datasheet Preview Page 3

Datasheet Details

Part number:

FDP603AL

Manufacturer:

Fairchild Semiconductor

File Size:

414.54 KB

Description:

N-channel mosfet.

📁 Related Datasheet

FDP6030BL N-Channel MOSFET (Fairchild Semiconductor)

FDP6030BL N-Channel MOSFET (ON Semiconductor)

FDP6030L N-Channel MOSFET (Fairchild Semiconductor)

FDP6035AL N-Channel MOSFET (Fairchild Semiconductor)

FDP6035L N-Channel MOSFET (Fairchild Semiconductor)

FDP6021P 20V P-Channel MOSFET (Fairchild Semiconductor)

FDP61N20 N-Channel MOSFET (Fairchild Semiconductor)

FDP65N06 N-Channel MOSFET (Fairchild Semiconductor)

TAGS

FDP603AL N-Channel MOSFET Fairchild Semiconductor

FDP603AL Distributor