FDP7N50

N-Channel MOSFET

Fairchild Semiconductor

FDP7N50 Features

* 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V

* Low gate charge ( typical 12.8 nC)

* Low Crss ( typical 9 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect tra

FDP7N50 General Description

TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pu.

FDP7N50 Datasheet (318.50 KB)

FDP7N50 Datasheet Preview — Preview of FDP7N50 PDF

Datasheet Details

Part number:

FDP7N50

Manufacturer:

Fairchild Semiconductor

File Size:

318.50 KB

Description:

N-channel mosfet.

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FDP7N50 N-Channel MOSFET Fairchild Semiconductor

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FDP7N50 Features

FDP7N50 General Description

Datasheet Details

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Description:

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